APTGT50H60T3G APTGT50H60T3G ? rev 1, june, 2006 1 - 5 www . microsemi . com absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 80 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 100 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 176 w rbsoa reverse bias safe operating area t j = 150c 100a @ 550v these devices are sensitive to electrostatic discharge. proper handing procedures should be followed . see application note apt0502 on www.microsemi.com q3 11 10 q1 cr1 7 22 13 14 cr3 3 30 29 32 18 19 23 8 15 31 r1 16 4 cr4 cr2 q2 q4 26 27 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 ? v ces = 600v i c = 50a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching freque nc y up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design ? high level of integration ? internal thermistor for temperature monitoring benefits ? stable temperature behavior ? very rugged ? solderable terminals for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? each leg can be easily paralleled to achieve a phase leg of twice the current capability ? rohs compliant full - bridge trench + field stop igbt ? power module
APTGT50H60T3G APTGT50H60T3G ? rev 1, june, 2006 2 - 5 www . microsemi . com all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 50a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 600a 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 3150 c oes output capacitance 200 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 95 pf t d(on) turn-on delay time 110 t r rise time 45 t d(off) turn-off delay time 200 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? 40 ns t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 250 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? 60 ns t j = 25c 0.3 e on tur n-o n switchi ng energy t j = 150c 0.43 mj t j = 25c 1.35 e off turn-off switching energy v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? t j = 150c 1.75 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 250 i rm maximum reverse leakage current v r =600v t j = 150c 500 a i f dc forward current tc = 80c 50 a t j = 25c 1.6 2 v f diode forward voltage i f = 50a v ge = 0v t j = 150c 1.5 v t j = 25c 100 t rr reverse recovery time t j = 150c 150 ns t j = 25c 2.6 q rr reverse recovery charge t j = 150c 5.4 c t j = 25c 0.6 e r reverse recovery energy i f = 50a v r = 300v di/dt =1800a/s t j = 150c 1.2 mj
APTGT50H60T3G APTGT50H60T3G ? rev 1, june, 2006 3 - 5 www . microsemi . com temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 0.85 r thjc junction to case thermal resistance diode 1.42 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTGT50H60T3G APTGT50H60T3G ? rev 1, june, 2006 4 - 5 www . microsemi . com typical performance curve output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 20 40 60 80 100 00.511.522.53 v ce (v ) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 20 40 60 80 100 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 20 40 60 80 100 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 0.5 1 1.5 2 2.5 3 3.5 0 20406080100 i c (a) e (mj) v ce = 300v v ge = 15v r g = 8.2 ? t j = 150c eo n eon eoff er 0 0.5 1 1.5 2 2.5 3 5 152535455565 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 50a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 25 50 75 100 125 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =8.2 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) igbt
APTGT50H60T3G APTGT50H60T3G ? rev 1, june, 2006 5 - 5 www . microsemi . com forward characteristic of diode t j =25c t j =125c t j =150c 0 20 40 60 80 100 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) hard switching zcs zvs 0 20 40 60 80 100 120 0 20406080 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =8.2 ? t j =150c t c =85c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode m icros e mi re se rve s the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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